17 results
Enhancement Mode GaN MOSFETs on Silicon Substrates with High Field-effect Mobility
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C03-02
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- 2008
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Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I16-06
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- 2006
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500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage
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- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I15-20
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- 2006
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High Power AlGaN/GaN Schottky Barrier Diode with 1000 V Operation
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- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF05-02
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- 2005
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Effects of the high-refractive index SiNx passivation on AlGaN/GaN HFETs with a very low gate-leakage current
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF05-03
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- 2005
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AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss Switching Device
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E6.3
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- 2004
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Normally-off operation GaN HFET using a thin AlGaN layer for low loss switching devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E6.5
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- 2004
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High Temperature Operation of A New Normally-Off AlGaN/GaN HFET on Si Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y7.3
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- 2003
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Electrical Properties of GaN/Si Grown by MOCVD
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.23
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- 2002
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AlGaN/GaN HFETs for Automotive Applications
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L11.45
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- 2002
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Electroluminescence And Photoluminescence Studies Of A Nitride-Rich GaN1-XPx SQW Structure LED Grown By Laser-Assisted Metal-Organic Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I3.44.1
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- 2001
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A High-Power AlGaN/GaN Hetero Field-Effect Transistor
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I12.7.1
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- 2001
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High-Temperature Reliability of GaN Electronic Devices
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 369-375
- Print publication:
- 2000
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Fabrication of a High-Power Gan Metal Semiconductor Field-Effect Transistor
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G13.4
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- 2000
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Nitride-Rich Hexagonal GaNP Growth Using Metalorganic Chemical Vapor Deposition
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G2.2
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- 2000
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High-Temperature Reliability of GaN Electronic Devices
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W4.8
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- 1999
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New Damage-Less Patterning Method of A GaAs Oxide Mask and Its Application to Selective Growth by Mombe
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- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 513
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- 1993
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